Methods and Apparatus for Via Last Through-Vias

ABSTRACT

Methods for forming via last through-vias. A method includes providing an active device wafer having a front side including conductive interconnect material disposed in dielectric layers and having an opposing back side; providing a carrier wafer having through vias filled with an oxide extending from a first surface of the carrier wafer to a second surface of the carrier wafer; bonding the front side of the active device wafer to the second surface of the carrier wafer; etching the oxide in the through vias in the carrier wafer to form through oxide vias; and depositing conductor material into the through oxide vias to form conductors that extend to the active carrier wafer and make electrical contact to the conductive interconnect material. An apparatus includes a carrier wafer with through oxide vias extending through the carrier wafer to an active device wafer bonded to the carrier wafer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.13/678,371, filed Nov. 15, 2012, entitled “Methods and Apparatus for ViaLast Through-Vias” which is related to, and claims priority to U.S.Provisional Application No. 61/625,987, filed on Apr. 18, 2012, entitled“Fabrication Method of Via-last TOV for BSI Image Sensor and ResultingStructures”, which is herein incorporated by reference.

BACKGROUND

In forming conventional through-via (TV) processes for three dimensional(3D) arrangements using semiconductor wafers, low-temperature oxidationis adopted to line through silicon vias (TSVs) with a thin oxide layerto isolate the TSV's from the wafer. Due to the high aspect ratio of atypical TSV, the stress in the trench corners at the bottom of the viasin the wafer may cause oxide cracks, and when the metallization issubsequently formed, metal extrusions (such as copper or Cu extrusions)may form. These cracks and extrusions negatively impact devicereliability and performance.

In a particular application of TVs, during fabrication of back sideillumination (BSI) CMOS image sensor (CIS) devices, a carrier wafer maybe wafer bonded to an active device wafer using wafer bonding. Forexample, a silicon wafer may be the active device wafer and may havemany integrated circuits formed therein, where the integrated circuitsare each CIS devices, the integrated circuits each having an array ofphotodiodes. Several metallization layers may be formed in layers ofdielectric material formed over the front side of the active devicewafer.

On the opposing back side of the active device wafer, for a back sideilluminated (BSI) image sensor, light will allowed to fall on thephotodiodes of the BSI CIS devices, and color filter array (CFA)material may be formed over the back side of the active device wafer andaligned with the photodiodes to form color pixels. Microlens (ML)material may be arranged over the CFA material to further increase thelight reception. A glass layer may be bonded to the back side of theactive device wafer to protect the CIS devices. Materials used for theCFA, ML and bonding material may be particularly sensitive to hightemperature processes.

To complete these BSI CIS devices, in a wafer level process, the carrierwafer such as a silicon carrier wafer may be bonded over the front sideof the active device wafer. In the conventional approach, TVs may beetched into and through the semiconductor carrier wafer, creating viaopenings that extend through the carrier wafer. The TVs may be extendedto expose a portion of the uppermost metallization layers formed overthe active device wafer. A copper conductive material or other conductormay be deposited in the through-vias, and the conductors createelectrical paths extending through the carrier wafer.

The silicon etch processes to form TSVs in the carrier wafer, and therelated thermal and mechanical stresses that occur, may cause cracks inthe upper dielectric layers of the active device wafer. Cracks may formin the liner oxide layer in the vias. Further, copper extrusions mayform into these cracks during the copper deposition processes. Theprocesses used in forming the TSVs in the carrier wafer may require hightemperature processes. The high temperatures used in these processes mayfurther create undesirable thermal stresses on the devices in the activedevice wafer and on other materials used.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawing, in which:

FIG. 1 depicts in a cross sectional view an active device wafer which isa BSI CIS example device for use with the embodiments ;

FIG. 2 depicts in a cross sectional view an embodiment carrier wafer atan intermediate processing stage;

FIG. 3 depicts in a cross sectional view the carrier wafer of FIG. 3following additional processing;

FIG. 4 depicts in a cross sectional view the carrier wafer of FIG. 3following CMP processing;

FIG. 5 depicts in a cross sectional view the carrier wafer of FIG. 4following further oxide deposition processing;

FIG. 6 depicts in a cross sectional view an embodiment having a carrierwafer such as in FIG. 5 bonded to an active device wafer to form anembodiment bonded wafer structure;

FIG. 7 depicts in a cross sectional view structure of FIG. 6illustrating the carrier wafer following wafer thinning processing;

FIG. 8 depicts in a cross sectional view the bonded wafer structure ofFIG. 7 following via processing;

FIG. 9 depicts in a cross sectional view the bonded wafer structure ofFIG. 8 following additional processing;

FIG. 10 depicts in a cross sectional view a completed bonded waferstructure of the embodiments;

FIG. 11 depicts in a cross sectional view the bonded wafer structure ofFIG. 8 following additional processing to illustrate an alternativeembodiment; and

FIG. 12 depicts in a cross sectional view the bonded wafer structure ofFIG. 11 following additional processing of the alternative embodiment.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the preferredembodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION

The making and using of the illustrative example embodiments arediscussed in detail below. It should be appreciated, however, that thisspecification provides many applicable concepts that can be embodied ina wide variety of specific contexts. The example embodiments discussedare merely illustrative of specific ways to make and use the variousembodiments, and do not limit the scope of the invention or the appendedclaims.

As will be illustrated in the attached figures, the illustrativeembodiments provide for a process for improved reliability ofinterconnects such as through vias, including through silicon vias orthrough substrate vias, vias extending through interposers, and thelike, all generally referred to herein as TV's. In one application thatis particularly well suited to the use of the embodiments, BSI CISdevices are formed in the active device wafer. However, 3D packagingusing bonded wafers is increasing and the TVs and methods of theembodiments are applicable to many applications where carrier wafers orcarrier substrates having through vias are formed extending to anotherwafer or substrate. As further provided below, the illustratedembodiments include forming a via with a high density plasma oxide (HDPOx) process on a carrier wafer. A grinding or polishing step exposes thebottom of the through vias and the HDP Ox. A via opening is later formedin the HDP Ox. The through via formed is then a through oxide via (TOV),as opposed to a prior approach through silicon via (TSV). The TOV may beformed using lower temperature etch processes and lower thermal stressesare thus created. The oxide cracks and metal extrusion observed in theconventional TV approaches are eliminated, providing increasedreliability in the finished devices.

Advantageous features of the use of the illustrated embodiments mayinclude: simpler via etching; less thermal impact on materials used inthe active device wafer, for example in the BSI CIS application, thethermal impact is lessened on the CFA/ML material and the bondingmaterials; and the use of the embodiments also provides reduced risk ofoxide cracking at the via sidewalls and corners.

FIG. 1 illustrates, in a cross sectional view, an active device wafer11. While the examples used herein to illustrate the use of theembodiments describe the active device wafer 11 as a BSI CIS devicewafer, the embodiments provide through vias and 3D wafer assemblies thathave advantages that are applicable to through vias in wafers andsubstrates where a carrier wafer is stacked with other devices, withoutlimiting the embodiments to any particular application.

Turning now to FIG. 1, a BSI CIS device 11 is shown. A substrate 13,which may be a silicon wafer or other semiconductor wafer, is provided.An array of photodiodes 23 is formed in a portion of substrate 13.Periphery circuits may include MOS transistors such as 21 and 19, whichmay be for example, a P-MOS transistor 21 and an N-MOS transistor 19formed in doped wells. Gate conductors 29, which may be polysilicon,doped polysilicon or other gate material including metal gate material,and which may have sidewall insulators (not shown) formed thereon areshown formed over the transistors formed in doped well regions 21 and19, and photodiodes 23. As is known, the array of photodiodes 23 mayinclude certain access transistors (not shown for simplicity) such as acharge transfer transistor, read select transistor, and reset transistorin a 3T or 4T photodiode cell. Isolation regions 33, which may beshallow trench isolation (STI) or LOCOS isolation, are shown providingisolation between the photodiodes 23 from the transistor wells 21 and19, which are also, isolated electrically one from another.

Overlying a front side surface of the wafer 13 is a dielectric structure25, which may include a plurality of interlevel and intermetaldielectric layers. These layers include the so-called BEOL (back end ofline) layers of the active device wafer. The BEOL layers includeconductive interconnects as is known in the art.

Materials in dielectric structure 25 may include one or more dielectricssuch as silicon dioxide, nitrides, oxides, oxynitrides, and high-k andlow-k dielectrics. Conductors such as top level conductor 31 are formedin layers in the dielectric structure 25 and are separated into aplurality of metal layers such as a metal-1, metal-2, etc. metal layers.These are electrically isolated by dielectric layers within dielectricstructure 25 and may be formed, for example, using dielectric materialthat is patterned to form trenches, using electrochemical plating (ECP)to fill the trenches with conductor material such as copper or aluminumcopper alloys, and using CMP polishing to then remove excess material ateach metallization level; this process is repeated to form the variouslevels of metallization. Dual damascene and single damascene processesmay be used to form the conductors in the dielectric layers.

CFA material 35 is formed over the back side surface of wafer 13. Byallowing only red, green or blue light to pass to a corresponding one ofthe photodiodes 23, the CFA with the photodiodes creates color pictureelements (pixels) in the photodiode array of the BSI sensor 11.Microlens (ML) devices 37 collect and focus incipient light onto the CFAand the photodiodes. A temporary bonding material 15 is provided, forexample, over the ML devices. A glass substrate 17 is bonded over thebackside of the wafer 13 to protect the image sensor photodiodes andthis glass substrate 17 completes the backside portion of the BSI CISdevice 11.

After the active device wafer 13 is completed and forms the CIS sensor11, further process steps are needed to form electrical connections tothe sensor.

Note that while the BSI CIS sensor 11 is used as a particular example toillustrate the embodiments, the embodiments provide a 3D wafer bondedstructure that may be used with any active device wafer type. Forexample, digital signal processors, memory devices including volatileand non-volatile memories, analog processors, RF circuits, resistors,inductors and capacitors could be used in the active device wafer, anytype of device may be formed in the active device wafer and using theembodiments, provided in a 3D packaged arrangement using wafer bondingand through vias to couple the active device wafer to externalconnections.

FIG. 2 depicts in a cross sectional view an embodiment carrier wafer 41at an intermediate stage of processing. In the embodiments, the carrierwafer 41 is prepared in a series of front-end processes before beingbonded to the active device wafer 11 of FIG. 1. In FIG. 2, a photoresistor hard mask layer 43 is deposited over a wafer 45. The layer 43 ispatterned using photolithography and etching steps to form openings 47corresponding to vias to be formed in wafer 45 as described below. Wafer45 may be a semiconductor wafer and may be a silicon wafer, althoughgermanium, indium, gallium arsenide and other materials forsemiconductor wafers may also be used. Other carrier materials used inwafer bonding such as glass and ceramic could be used for wafer 45, asalternative embodiments.

FIG. 3 depicts in a cross sectional view the carrier wafer 41 of FIG. 2following some additional processing steps. In transitioning from thecross section of FIG. 2 to that of FIG. 3, an etch process such as a dryetch including plasma etch, RIE etch or the like was used to extend vias40 into the wafer 45 using the photoresist layer 43 (see FIG. 2) as anetch mask. The photoresist layer 43 was then removed. High densityplasma (HDP) processing, for example, may be used to deposit an oxide 42filling the vias 40, and covering the surface of the wafer 45. HDPoxides may be formed by using a plasma reactor with SiH4 (silane) as aprecursor gas and using oxygen to provide the depositing atoms. HDPoxides are dense and form at relatively low temperatures when comparedto other oxide depositions. However, the embodiments are not limited toHDP oxide for the oxide layer 42; other materials that could be usedinclude HARP (high aspect ratio processing for CVD), SACVD, BPSG Oxide,as non-limiting examples.

FIG. 4 depicts in a cross sectional view the carrier wafer 41illustrated in FIG. 3, following additional processing steps. Totransition from the intermediate stage of FIG. 3 to the stage shown inFIG. 4, a chemical mechanical polishing (CMP) or other oxide removalprocess such as an etch is used to remove the portion of the oxide 42from the upper surface of the wafer 45, and if CMP is used, it also mayfurther planarize the upper surface of the wafer 45. Vias 40 then remainfilled with the oxide 42. The thickness t1 of the carrier wafer mayrange from about 400 to about 800 microns. In a non-limitingillustrative example, the carrier wafer 41 may have a thickness t1 atthis stage of about 750 microns.

FIG. 5 depicts in a cross sectional view the carrier wafer 41illustrated in FIG. 4 following additional processing steps. Totransition from the intermediate stage of FIG. 4 to the stage shown inFIG. 5, an oxide deposition such as a CVD, PECVD or PVD deposition, or athermal oxide growth, is used to form an oxide layer 44 over the uppersurface of the wafer 45. Layer 44 may be from 0.1 microns to 1 micronthick, for example. This layer 44 is to be used in a subsequentoxide-to-oxide wafer bonding process, as described below, when thecarrier wafer 41 may be molecularly bonded to an oxide layer on asurface of the active device wafer (not shown in FIG. 5). The oxidelayer 44 has an exposed surface that is relatively flat and smooth andwhich is compatible with wafer bonding techniques.

FIG. 6 depicts in another cross sectional view the carrier wafer 41 ofFIG. 6 after the preparation processes described above are complete andafter an oxide to oxide wafer bonding process is performed. The carrierwafer 41 is now shown rotated with the exposed surface facing down, ascompared to FIG. 5. The cross section in FIG. 6 is illustrated forclarity but could be shown with the carrier wafer beneath the activedevice wafer, for example. Now carrier wafer 41 is bonded to the activedevice wafer 11 (see FIG. 1). An oxide-to-oxide wafer bonding process isused to bond the oxide layer 44 of carrier wafer 41 to an oxide layer 46formed overlying the front side of wafer 13 of active device wafer 11.Oxide layer 46 may also be thermally grown oxide or may be deposited byCVD, PECVD, PVD over the active device wafer 11 on the front side, andmay be from 1 micron to about 2 microns thick. To form the wafer bond,the surfaces of the oxide layers 44 and 46 may be activated by a plasmaprocess, or chemically cleaned, for example, and then placed in physicalcontact. The wafer bonding may take place at ambient temperature or withincreased temperature, and may be performed in a vacuum chamber. In anembodiment, a temperature range from about 150 degrees C. to about 450degrees C. may be used during the wafer bonding process.

In mounting the carrier wafer 41 to the active device wafer 11, the vias40 are aligned with certain portions of the top level metallizationportions 31 in the active device wafer 11. The vias 40 will be used insubsequent steps (described below) to form vertical through oxide viasthat make electrical connections from the upper surface of the carrierwafer 41 to portions of the metallization layers of active device wafer11.

FIG. 7 depicts in a cross sectional view the carrier wafer 41 and activedevice wafer 11 illustrated in FIG. 6 following additional processingsteps. To transition from the intermediate stage of FIG. 6 to theprocess stage shown in FIG. 7, a wafer grinding or wafer thinningoperation, which may include mechanical wafer grinding, silicon etching,CMP, or combinations of these processes, is performed on the (now upper)surface of wafer 45 to expose the vias 40, thus forming through vias 40extending through wafer 45. The through vias 40 remain filled with theHDP oxide material 42.

FIG. 8 depicts, in the carrier wafer 41 and active device wafer 11following additional processing. A photoresist or hard mask layer 53 isformed over the exposed surface of carrier wafer 41. Openings 55 areformed in the photoresist or hard mask layer 53, using photolithographyand etch processes. Using the openings 55 and using photoresist layer 53as an etch mask, through oxide vias (TOVs) 51 are formed in the HDPoxide 42 and are extended through the oxide layers 44 and 46 to exposethe a portion of the top most layer of the metallization structure 31 inactive device wafer 11.

The etch process used to form the TOVs 51 is an oxide etch process, andmay be performed by an RIE etch, which is particularly well suited tothe high aspect ratio and anisotropic properties in forming a narrow viaopenings in the HDP oxide 42 and extending into the oxide layers 44, 46.Because the etch is an oxide etch, it may be performed at temperaturesthat have a relatively low thermal impact on the materials in the activedevice wafer 11, including for example, the CFA and ML materials. Also,TOVs 51 are etched through HDP oxide 42 and the opening continues intoanother oxide layer 44 and then into oxide layer 46 so that the entireetch process is oxide etching. In contrast, in the prior approaches, thecomparable etch is a silicon through etch through the carrier wafer intooxide layers below, which creates additional thermal stress on theoxides.

The vias 51 are formed after the wafer bonding process and so theprocess may be considered a “via last” approach.

Comparing the approaches of the embodiments described herein to theprior silicon via etch and thermal oxidation liner formation, the use ofthe embodiments provides several advantages. Problems that occurred dueto the “corner” stresses formed in the prior approach do not occur whenthe embodiments with the TOVs are used, because in the embodiments theHDP oxide is used to isolate the conductor formed in the vias from thecarrier wafer, whereas in the prior approaches the liner oxidedeposition that was performed as a low temperature thermal oxide into ahigh aspect ratio via, creating areas where cracking occurred. Using theembodiments, the HDP oxide forms an isolation layer and so this lineroxide step is no longer performed. In contrast to the problems of theprior approaches, use of the embodiments and the TOVs eliminate thethermal liner oxide and also the reliability issues that accompany it.

FIG. 9A depicts in a cross sectional view the carrier wafer 41 of FIG. 8and the active device wafer 11 after additional processing steps. Totransition from FIG. 8 to FIG. 9, the photoresist layer 53 is removed,and an electro-chemical plating (ECP) process is used to form a copper(Cu) redistribution layer (RDL) 57 into the sides and bottoms of thevias 51 and extending onto the exposed surface of wafer 45. The RDL 57may be one of copper or copper alloys, and may include barrier layersand adhesion layers such as titanium nitride, tantalum nitride and thelike to prevent copper ion diffusion, for example. One skilled in theart will recognize that liners, barrier layers, seed layers, and thelike might be formed in the vias prior to or after formation of thecopper or other conductor 57 filling the vias 51.

The RDL 57 is isolated from the wafer 45 in the vias 51 by the HDP oxide42, so that no additional insulator deposition is needed to maintainthis isolation. The RDL 57 extends into the vias 51 and to the exposedportion of the metallization layer 31 in active device wafer 11, andforms an electrical connection from the upper surface of wafer 45,through the through oxide via 51, and on to the metallization layer 31.RDL 57 forms also lies on the surface of the wafer 45 and as shown inFIG. 9, may be patterned to form a plurality of traces on the uppersurface of wafer 45. The RDL 57 thus provides trace portions for makingexternal electrical connections to the metallization layer 31 in activedevice wafer 11.

FIG. 10 depicts in another cross sectional view the carrier wafer 41 andactive device wafer 11 of FIG. 9 following additional processing steps.In FIG. 10, the TOVs 51 is shown after a layer of passivation material61 such as silicon nitride, for example, or another passivation materialis deposited over the RDL 57. The passivation material 61 covers the RDL57 in the vias and over the upper surface of wafer 45. Openings such as63 are formed in the passivation material 61 and in the openings,terminals 65 are formed. Terminals 65 may be ball grid array (BGA)terminals and form external terminals electrically contacting portionsof RDL 57. The BGA terminals 65 are electrically connected to the activedevice wafer 11 at the metallization layer 31 in the vias 51 by the RDL57. The BGA terminals 65 may be formed as solder balls or solder bumpsand may be deposited on the RDL layer 57 and then subjected to a thermalreflow process, for example, to complete the BGA terminals 65.

In the example embodiment process shown in FIGS. 9 and 10, the RDL 57 isformed with the BGA balls 65 without the need for CMP processes anddamascene processes that are often used to pattern copper or otherconductors onto vias.

FIGS. 11 and 12 now depict an alternative embodiment example. In FIG.11, the structure of FIG. 9 is shown in cross-section followingadditional process steps. A barrier layer such as TaN (tantalum nitride)is formed lining the vias 51. The vias 51 are shown filled with aconductor, such as copper or an alloy, that is formed by an ECP process,followed by a CMP process to remove the overburden and planarize thesurface of the vias 51. Thus this process is similar to a damasceneprocess as known for forming copper into vias.

FIG. 12 depicts the structure of FIG. 11 following additional processingsteps. In FIG. 12, the vias 51 are shown filled with the copper afterthe CMP process. An RDL layer 57 is formed of a conductor to form tracesover the substrate. This layer may be an Al/Cu alloy, for example,formed by photolithography and etch patterning to form traces coupled tothe vias. A passivation layer 61 is formed over the RDL layer 57,openings are formed and BGA balls 65 are formed on the traces tocomplete the external connections for the active device wafer 11.

The BGA terminals 65 in FIGS. 10 and 12 may be formed of lead-basedsolder, or lead-free solder, and may be formed of solder including oneor more of silver, tin, copper, for example. The BGA terminals formconductive terminals and may not be ball shaped, other shapes may beused such as pillars, columns, studs, stacks of studs, for example, toform alternative embodiments. The BGA terminals 65 may includeprotective finish layers such as nickel, gold, and palladium, and alloyssuch as ENIG, ENEPIG, for example. In alternative embodiments, the ballgrid array terminals 65 could be replaced with studs, pillars, bondwires, bumps and these could be copper, gold, or other conductivematerial including solder. Shapes could be columns, studs, pillars, wirebond bumps or wire bond studs, any shape that provides a conductiveterminal used for mounting a module or integrated circuit to anotherboard or substrate may be used as the terminals. In some embodiments,stacks of wire bond stud bumps are used with copper or gold wire, forexample, as an alternative to the BGA balls 65.

The processes described above and shown in FIGS. 2-10 may be performedin a wafer scale process, that is, the carrier wafer 41 may be bonded tothe active device wafer 11 as shown in FIG. 7 and the subsequent stepsincluding forming the TOVs and forming the conductive RDL layer, thepassivation layer, and the ball grid array terminals, may all beperformed at the wafer level. Alternatively, the devices could besingulated into individual modules, by dicing or sawing operations,after the wafer bonding steps, to form integrated circuit modules, andthen the individual integrated circuit modules could be completed. Waferlevel processing is increasingly used due to the economies of scale andefficiency, however, the embodiments are not to be limited to waferlevel processing embodiments.

As an advantage of the use of the embodiments described herein, it isbelieved that the process conditions required for etching the TOVsthrough an HDP oxide (or similar oxide) are less stressful, in terms ofthermal budget and mechanical stress, than the thermal conditions foretching in the prior approaches, e.g., silicon substrate etching of thecarrier wafer, while the active device wafer is already bonded to it.Further, it is believed that the HDP oxide surrounding the conductorwithin the TOVs of the embodiments may further improve reliability byeliminating the oxide cracks and conductor extrusions observed whenforming through-vias in the prior approaches.

In an example embodiment, a method includes forming at least one via ina carrier wafer; filling the at least one via with an oxide; mountingthe carrier wafer to a second wafer; etching a through via through theoxide filling the at least one via to form a through oxide via; andfilling the through oxide via with a conductor. In a further embodiment,the oxide in the above method is a high density plasma (HDP) oxide. Inanother embodiment, the method further includes thinning the carrierwafer. In still a further embodiment, in the above method, the at leastone via extends from a first surface of the carrier wafer into thecarrier wafer and does not extend to a second surface of the carrierwafer, prior to the thinning step. In still another embodiment, in theabove method the second wafer includes an image sensor. In anotherexample embodiment, in the above methods the second wafer includes aconductive interconnect and wherein the through oxide via extendsfurther to expose the conductive interconnect. In still a furtherembodiment, in the above methods, the conductor fills the through oxidevia and makes electrical connection to the conductive interconnect. Instill other embodiments, the conductor is copper. In another embodiment,the above methods are performed and further include forming externalterminals over the carrier wafer and in electrical contact with theconductor. In yet another embodiment, in the above methods, theconductor is copper.

In further embodiments, a method includes providing an active devicewafer having a front side including conductive interconnect materialdisposed in dielectric layers and having an opposing back side;providing a carrier wafer having through vias filled with an oxideextending from a first surface of the carrier wafer to a second surfaceof the carrier wafer; bonding the second surface of the carrier wafer tothe front side of the active device wafer; etching the oxide in thethrough vias to form through oxide vias extending from the first surfaceof the carrier wafer into the dielectric layers of the active devicewafer to expose a portion of the conductive interconnect material in thedielectric layers; and depositing conductor material into the throughoxide vias to form conductors that make electrical contact to theconductive interconnect material.

In further embodiments in the above method, the active device waferfurther includes CMOS image sensors. In still another embodiment, theabove methods include wherein the CMOS image sensors are back sideilluminated image sensors. In yet another embodiment, in the abovemethods, the methods include depositing the conductor material onto thesecond surface of the carrier wafer; patterning the conductor materialon the second surface of the carrier wafer to form conductive tracescoupled to the conductor material in the through oxide vias; and formingexternal connectors coupled to the conductive traces.

In still another embodiment, in the above methods forming externalconnectors includes forming passivation material over the second surfaceof the carrier wafer and covering the conductive traces; patterningopenings in the passivation material to expose portions of theconductive traces; and forming external connectors in the openings. Instill another embodiment, the above methods include wherein depositingconductor material further includes depositing copper. In still anotherembodiment, in the above methods, the methods include forming externalconnectors including forming one selected from the group consistingessentially of solder balls, columns, pillars, studs, solder bumps, wirebonds.

In another embodiment, an apparatus includes an active device waferhaving a wafer including a plurality of electrical devices and havingconductive interconnects disposed on a front side surface: and a carrierwafer disposed over the front side surface of the active device waferand wafer bonded to the active device wafer, the carrier wafer furtherincluding: through vias extending through the carrier wafer and havingan oxide material formed within the through vias; through oxide viasextending through the oxide material in the through vias, the throughoxide vias extending to expose a portion of the conductive interconnectsof the active device wafer; conductive material deposited in the throughoxide vias, the conductive material electrically contacting the exposedportion of the conductive interconnects of the device wafer; andexternal connectors formed over the carrier wafer and electricallyconnected to the conductive material.

In still another embodiment, in the apparatus above, the conductivematerial is copper. In yet another embodiment, in the apparatus above,the active device wafer includes backside illuminated CMOS imagesensors.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription.

What is claimed is:
 1. A semiconductor device comprising: an activedevice wafer having a first wafer including a plurality of electricaldevices and having conductive interconnects disposed on a front sidesurface of the first wafer; and a carrier wafer disposed over the frontside surface of the active device wafer and wafer bonded to the activedevice wafer, the carrier wafer having a second wafer, the second waferhaving a first surface facing the active device wafer and a secondsurface facing away from the active device wafer, the carrier waferfurther comprising: through vias extending through the carrier wafer andhaving an oxide material formed within the through vias: through oxidevias extending through the oxide material in the through vias, thethrough oxide vias extending to a portion of the conductiveinterconnects of the active device wafer; conductive material in thethrough oxide vias, the conductive material electrically contacting theportion of the conductive interconnects of the active device wafer; andexternal connectors over the carrier wafer and electrically connected tothe conductive material.
 2. The semiconductor device of claim 1, whereinthe conductive material comprises copper.
 3. The semiconductor device ofclaim 1, wherein the active device wafer comprises backside illuminatedCMOS image sensors.
 4. The semiconductor device of claim 1, wherein thethrough oxide vias has a first width at the first surface of the secondwafer and a second width at the second surface of the second wafer, thefirst width being greater than the second width.
 5. The semiconductordevice of claim 4, wherein the through oxide vias has a third width atthe first surface of the second wafer and a fourth width at the secondsurface of the second wafer, the third width being less than the fourthwidth.
 6. The semiconductor device of claim 1, wherein the active devicewafer comprises a first oxide layer, wherein the carrier wafer comprisesa second oxide layer, the first oxide layer is bonded directly to thesecond oxide layer.
 7. The semiconductor device of claim 1, wherein theactive device wafer comprises a backside imager.
 8. The semiconductordevice of claim 1, wherein the conductive material comprises aconductive liner and a conductive fill material.
 9. A semiconductordevice comprising: a first structure, the first structure comprising afirst substrate, one or more dielectric layers, and a conductive elementin the one or more dielectric layers; a second structure bonded to thefirst structure, the second structure comprising a second substrate, thesecond substrate having a first side and a second side, wherein thefirst side of the second substrate faces the first substrate; adielectric material extending from the first side of the secondsubstrate to the second side of the second substrate, wherein thedielectric material has a wider width at the first side of the secondsubstrate than at the second side of the second substrate; and aconductor extending through the dielectric material, wherein theconductor has a wider width at the second side of the second substratethan at the first side of the second substrate, wherein the conductorcontacts the conductive element.
 10. The semiconductor device of claim 9further comprising a dielectric layer over the second side of the secondsubstrate.
 11. The semiconductor device of claim 10, wherein thedielectric layer extends into the second substrate.
 12. Thesemiconductor device of claim 11, wherein the conductor extends over thesecond side of the second substrate.
 13. The semiconductor device ofclaim 12 further comprising an external connector mounted on theconductor.
 14. The semiconductor device of claim 13, wherein thedielectric layer extends along sidewalls of the external connector. 15.The semiconductor device of claim 9, wherein the conductor comprises aconductive liner and a conductive fill material over the conductiveliner.
 16. A semiconductor device comprising: a first structure, thefirst structure comprising a first substrate, one or more dielectriclayers, and a conductive element in the one or more dielectric layers; asecond structure bonded to the first structure, the second structurecomprising a second substrate, the second substrate having a first sideand a second side, wherein the first side of the second substrate facesthe first substrate; a conductor extending from the second side of thesecond substrate to the conductive element of the first structure; and afirst dielectric material interposed between the conductor and thesecond substrate, wherein the first dielectric material separates theconductor from the second substrate by a greater amount at the firstside of the second substrate than at the second side of the secondsubstrate.
 17. The semiconductor device of claim 16, wherein theconductor extends from a first sidewall of the first dielectric materialto a second sidewall of the first dielectric material at the second sideof the second substrate.
 18. The semiconductor device of claim 16further comprising a second dielectric material, wherein the conductoris interposed between the first dielectric material and the seconddielectric material along an axis parallel to a major surface of thesecond substrate.
 19. The semiconductor device of claim 18, wherein theconductor extends over the second side of the second substrate.
 20. Thesemiconductor device of claim 19, wherein the second dielectric materialextends along end sidewalls of the conductor.